000 01104 a2200349 4500
005 20250517024228.0
264 0 _c20150610
008 201506s 0 0 eng d
022 _a1094-4087
024 7 _a10.1364/OE.23.000A34
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aZhang, Yi Ping
245 0 0 _aNonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
_h[electronic resource]
260 _bOptics express
_cFeb 2015
300 _aA34-42 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aZhang, Zi-Hui
700 1 _aLiu, Wei
700 1 _aTan, Swee Tiam
700 1 _aJu, Zhen Gang
700 1 _aZhang, Xue Liang
700 1 _aJi, Yun
700 1 _aWang, Lian Cheng
700 1 _aKyaw, Zabu
700 1 _aHasanov, Namig
700 1 _aZhu, Bin Bin
700 1 _aLu, Shun Peng
700 1 _aSun, Xiao Wei
700 1 _aDemir, Hilmi Volkan
773 0 _tOptics express
_gvol. 23
_gno. 3
_gp. A34-42
856 4 0 _uhttps://doi.org/10.1364/OE.23.000A34
_zAvailable from publisher's website
999 _c24768539
_d24768539