| 000 | 01014 a2200289 4500 | ||
|---|---|---|---|
| 005 | 20250517023850.0 | ||
| 264 | 0 | _c20150825 | |
| 008 | 201508s 0 0 eng d | ||
| 022 | _a1361-6528 | ||
| 024 | 7 |
_a10.1088/0957-4484/26/16/164001 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aPi, T W | |
| 245 | 0 | 0 |
_aIn-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures. _h[electronic resource] |
| 260 |
_bNanotechnology _cApr 2015 |
||
| 300 |
_a164001 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aLin, Y H | |
| 700 | 1 | _aFanchiang, Y T | |
| 700 | 1 | _aChiang, T H | |
| 700 | 1 | _aWei, C H | |
| 700 | 1 | _aLin, Y C | |
| 700 | 1 | _aWertheim, G K | |
| 700 | 1 | _aKwo, J | |
| 700 | 1 | _aHong, M | |
| 773 | 0 |
_tNanotechnology _gvol. 26 _gno. 16 _gp. 164001 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1088/0957-4484/26/16/164001 _zAvailable from publisher's website |
| 999 |
_c24756901 _d24756901 |
||