000 00907 a2200241 4500
005 20250517011350.0
264 0 _c20150521
008 201505s 0 0 eng d
022 _a1520-5126
024 7 _a10.1021/ja511218g
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aColabello, Diane M
245 0 0 _aCharge disproportionation in tetragonal La2MoO5, a small band gap semiconductor influenced by direct Mo-Mo bonding.
_h[electronic resource]
260 _bJournal of the American Chemical Society
_cJan 2015
300 _a1245-57 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aCamino, Fernando E
700 1 _aHuq, Ashfia
700 1 _aHybertsen, Mark
700 1 _aKhalifah, Peter G
773 0 _tJournal of the American Chemical Society
_gvol. 137
_gno. 3
_gp. 1245-57
856 4 0 _uhttps://doi.org/10.1021/ja511218g
_zAvailable from publisher's website
999 _c24499008
_d24499008