000 | 00814 a2200229 4500 | ||
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005 | 20250516215058.0 | ||
264 | 0 | _c20150511 | |
008 | 201505s 0 0 eng d | ||
022 | _a2040-3372 | ||
024 | 7 |
_a10.1039/c4nr00112e _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aAl-Dirini, Feras | |
245 | 0 | 0 |
_aAsymmetrically-gated graphene self-switching diodes as negative differential resistance devices. _h[electronic resource] |
260 |
_bNanoscale _cJul 2014 |
||
300 |
_a7628-34 p. _bdigital |
||
500 | _aPublication Type: Journal Article | ||
700 | 1 | _aHossain, Faruque M | |
700 | 1 | _aNirmalathas, Ampalavanapillai | |
700 | 1 | _aSkafidas, Efstratios | |
773 | 0 |
_tNanoscale _gvol. 6 _gno. 13 _gp. 7628-34 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1039/c4nr00112e _zAvailable from publisher's website |
999 |
_c23888927 _d23888927 |