000 00814 a2200229 4500
005 20250516215058.0
264 0 _c20150511
008 201505s 0 0 eng d
022 _a2040-3372
024 7 _a10.1039/c4nr00112e
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aAl-Dirini, Feras
245 0 0 _aAsymmetrically-gated graphene self-switching diodes as negative differential resistance devices.
_h[electronic resource]
260 _bNanoscale
_cJul 2014
300 _a7628-34 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aHossain, Faruque M
700 1 _aNirmalathas, Ampalavanapillai
700 1 _aSkafidas, Efstratios
773 0 _tNanoscale
_gvol. 6
_gno. 13
_gp. 7628-34
856 4 0 _uhttps://doi.org/10.1039/c4nr00112e
_zAvailable from publisher's website
999 _c23888927
_d23888927