| 000 | 00792 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250516190356.0 | ||
| 264 | 0 | _c20140917 | |
| 008 | 201409s 0 0 eng d | ||
| 022 | _a1936-086X | ||
| 024 | 7 |
_a10.1021/nn404961e _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aDankert, André | |
| 245 | 0 | 0 |
_aHigh-performance molybdenum disulfide field-effect transistors with spin tunnel contacts. _h[electronic resource] |
| 260 |
_bACS nano _cJan 2014 |
||
| 300 |
_a476-82 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aLangouche, Lennart | |
| 700 | 1 | _aKamalakar, Mutta Venkata | |
| 700 | 1 | _aDash, Saroj Prasad | |
| 773 | 0 |
_tACS nano _gvol. 8 _gno. 1 _gp. 476-82 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/nn404961e _zAvailable from publisher's website |
| 999 |
_c23404407 _d23404407 |
||