000 01156 a2200373 4500
005 20250516172013.0
264 0 _c20140513
008 201405s 0 0 eng d
022 _a1530-6992
024 7 _a10.1021/nl402544n
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aWang, F
245 0 0 _aWide-gap semiconducting graphene from nitrogen-seeded SiC.
_h[electronic resource]
260 _bNano letters
_cOct 2013
300 _a4827-32 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, U.S. Gov't, Non-P.H.S.
650 0 4 _aElectronics
650 0 4 _aGraphite
_xchemistry
650 0 4 _aNanostructures
_xchemistry
650 0 4 _aNanotechnology
650 0 4 _aNitrogen
_xchemistry
650 0 4 _aSemiconductors
650 0 4 _aSurface Properties
700 1 _aLiu, G
700 1 _aRothwell, S
700 1 _aNevius, M
700 1 _aTejeda, A
700 1 _aTaleb-Ibrahimi, A
700 1 _aFeldman, L C
700 1 _aCohen, P I
700 1 _aConrad, E H
773 0 _tNano letters
_gvol. 13
_gno. 10
_gp. 4827-32
856 4 0 _uhttps://doi.org/10.1021/nl402544n
_zAvailable from publisher's website
999 _c23111606
_d23111606