000 | 01156 a2200373 4500 | ||
---|---|---|---|
005 | 20250516172013.0 | ||
264 | 0 | _c20140513 | |
008 | 201405s 0 0 eng d | ||
022 | _a1530-6992 | ||
024 | 7 |
_a10.1021/nl402544n _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aWang, F | |
245 | 0 | 0 |
_aWide-gap semiconducting graphene from nitrogen-seeded SiC. _h[electronic resource] |
260 |
_bNano letters _cOct 2013 |
||
300 |
_a4827-32 p. _bdigital |
||
500 | _aPublication Type: Journal Article; Research Support, U.S. Gov't, Non-P.H.S. | ||
650 | 0 | 4 | _aElectronics |
650 | 0 | 4 |
_aGraphite _xchemistry |
650 | 0 | 4 |
_aNanostructures _xchemistry |
650 | 0 | 4 | _aNanotechnology |
650 | 0 | 4 |
_aNitrogen _xchemistry |
650 | 0 | 4 | _aSemiconductors |
650 | 0 | 4 | _aSurface Properties |
700 | 1 | _aLiu, G | |
700 | 1 | _aRothwell, S | |
700 | 1 | _aNevius, M | |
700 | 1 | _aTejeda, A | |
700 | 1 | _aTaleb-Ibrahimi, A | |
700 | 1 | _aFeldman, L C | |
700 | 1 | _aCohen, P I | |
700 | 1 | _aConrad, E H | |
773 | 0 |
_tNano letters _gvol. 13 _gno. 10 _gp. 4827-32 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1021/nl402544n _zAvailable from publisher's website |
999 |
_c23111606 _d23111606 |