000 01196 a2200361 4500
005 20250516161402.0
264 0 _c20130807
008 201308s 0 0 eng d
022 _a1533-4880
024 7 _a10.1166/jnn.2013.7172
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aSun, Jong-Won
245 0 0 _aReduction process of dislocation and standby leakage current for embedded flash memory using nano-scale integration.
_h[electronic resource]
260 _bJournal of nanoscience and nanotechnology
_cJun 2013
300 _a4291-6 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aPark, Ji Hwan
700 1 _aYang, Taek-Seung
700 1 _aChoi, Heesoo
700 1 _aCui, Yinhua
700 1 _aChoi, Eunmi
700 1 _aKim, Areum
700 1 _aOh, Lee Seul
700 1 _aLee, Sun Jae
700 1 _aPark, Hyunjin
700 1 _aKim, Chang Hyun
700 1 _aKim, Soo-Kil
700 1 _aSon, Hyungbin
700 1 _aLee, Dong Hyun
700 1 _aPyo, Sung Gyu
773 0 _tJournal of nanoscience and nanotechnology
_gvol. 13
_gno. 6
_gp. 4291-6
856 4 0 _uhttps://doi.org/10.1166/jnn.2013.7172
_zAvailable from publisher's website
999 _c22924897
_d22924897