| 000 | 00919 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250516161402.0 | ||
| 264 | 0 | _c20130807 | |
| 008 | 201308s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2013.7012 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aPark, Seung-Gon | |
| 245 | 0 | 0 |
_aElectrical properties of Ta(Si)N films prepared by atomic layer deposition from tert-butylimido-tris-diethylamido tantalum, silane and hydrogen plasma. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cJun 2013 |
||
| 300 |
_a4097-100 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aWoo, Hee-Gweon | |
| 700 | 1 | _aSunwoo, Changshin | |
| 700 | 1 | _aKim, Do-Heyoung | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 13 _gno. 6 _gp. 4097-100 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2013.7012 _zAvailable from publisher's website |
| 999 |
_c22924862 _d22924862 |
||