000 00934 a2200277 4500
005 20250516151403.0
264 0 _c20140115
008 201401s 0 0 eng d
022 _a1530-6992
024 7 _a10.1021/nl400778q
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aLiu, Han
245 0 0 _aStatistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
_h[electronic resource]
260 _bNano letters
_cJun 2013
300 _a2640-6 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aSi, Mengwei
700 1 _aNajmaei, Sina
700 1 _aNeal, Adam T
700 1 _aDu, Yuchen
700 1 _aAjayan, Pulickel M
700 1 _aLou, Jun
700 1 _aYe, Peide D
773 0 _tNano letters
_gvol. 13
_gno. 6
_gp. 2640-6
856 4 0 _uhttps://doi.org/10.1021/nl400778q
_zAvailable from publisher's website
999 _c22756034
_d22756034