| 000 | 00815 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250516113047.0 | ||
| 264 | 0 | _c20121128 | |
| 008 | 201211s 0 0 eng d | ||
| 022 | _a1556-276X | ||
| 024 | 7 |
_a10.1186/1556-276X-7-523 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
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| 100 | 1 | _aCapelle, Marie | |
| 245 | 0 | 0 |
_aRF performances of inductors integrated on localized p+-type porous silicon regions. _h[electronic resource] |
| 260 |
_bNanoscale research letters _cSep 2012 |
||
| 300 |
_a523 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aBilloué, Jérôme | |
| 700 | 1 | _aPoveda, Patrick | |
| 700 | 1 | _aGautier, Gaël | |
| 773 | 0 |
_tNanoscale research letters _gvol. 7 _gno. 1 _gp. 523 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1186/1556-276X-7-523 _zAvailable from publisher's website |
| 999 |
_c22133615 _d22133615 |
||