| 000 | 00942 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250516111849.0 | ||
| 264 | 0 | _c20130318 | |
| 008 | 201303s 0 0 eng d | ||
| 022 | _a1944-8252 | ||
| 024 | 7 |
_a10.1021/am301253x _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aBak, Jun Yong | |
| 245 | 0 | 0 |
_aEffect of the electrode materials on the drain-bias stress instabilities of In-Ga-Zn-O thin-film transistors. _h[electronic resource] |
| 260 |
_bACS applied materials & interfaces _cOct 2012 |
||
| 300 |
_a5369-74 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aYang, Sinhyuk | |
| 700 | 1 | _aRyu, Min Ki | |
| 700 | 1 | _aKo Park, Sang Hee | |
| 700 | 1 | _aHwang, Chi Sun | |
| 700 | 1 | _aYoon, Sung Min | |
| 773 | 0 |
_tACS applied materials & interfaces _gvol. 4 _gno. 10 _gp. 5369-74 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/am301253x _zAvailable from publisher's website |
| 999 |
_c22101384 _d22101384 |
||