| 000 | 00931 a2200241 4500 | ||
|---|---|---|---|
| 005 | 20250516111624.0 | ||
| 264 | 0 | _c20120927 | |
| 008 | 201209s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2012.6233 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aRyoo, Kyung-Chang | |
| 245 | 0 | 0 |
_aDimensional effect of non-polar resistive random access memory (RRAM) for low-power memory application. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cJul 2012 |
||
| 300 |
_a5270-5 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aOh, Jeong-Hoon | |
| 700 | 1 | _aJung, Sunghun | |
| 700 | 1 | _aJeong, Hongsik | |
| 700 | 1 | _aPark, Byung-Gook | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 12 _gno. 7 _gp. 5270-5 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2012.6233 _zAvailable from publisher's website |
| 999 |
_c22094051 _d22094051 |
||