| 000 | 00938 a2200253 4500 | ||
|---|---|---|---|
| 005 | 20250516105205.0 | ||
| 264 | 0 | _c20121213 | |
| 008 | 201212s 0 0 eng d | ||
| 022 | _a1556-276X | ||
| 024 | 7 |
_a10.1186/1556-276X-7-367 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aGautier, Gael | |
| 245 | 0 | 0 |
_aRoom light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. _h[electronic resource] |
| 260 |
_bNanoscale research letters _cJul 2012 |
||
| 300 |
_a367 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aCayrel, Frederic | |
| 700 | 1 | _aCapelle, Marie | |
| 700 | 1 | _aBilloué, Jérome | |
| 700 | 1 | _aSong, Xi | |
| 700 | 1 | _aMichaud, Jean-Francois | |
| 773 | 0 |
_tNanoscale research letters _gvol. 7 _gno. 1 _gp. 367 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1186/1556-276X-7-367 _zAvailable from publisher's website |
| 999 |
_c22024371 _d22024371 |
||