000 01059 a2200325 4500
005 20250516064759.0
264 0 _c20120626
008 201206s 0 0 eng d
022 _a1079-7114
024 7 _a10.1103/PhysRevLett.107.157403
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aSasakura, H
245 0 0 _aEnhanced photon generation in a Nb/n-InGaAs/p-InP superconductor/semiconductor-diode light emitting device.
_h[electronic resource]
260 _bPhysical review letters
_cOct 2011
300 _a157403 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aKuramitsu, S
700 1 _aHayashi, Y
700 1 _aTanaka, K
700 1 _aAkazaki, T
700 1 _aHanamura, E
700 1 _aInoue, R
700 1 _aTakayanagi, H
700 1 _aAsano, Y
700 1 _aHermannstädter, C
700 1 _aKumano, H
700 1 _aSuemune, I
773 0 _tPhysical review letters
_gvol. 107
_gno. 15
_gp. 157403
856 4 0 _uhttps://doi.org/10.1103/PhysRevLett.107.157403
_zAvailable from publisher's website
999 _c21334115
_d21334115