| 000 | 00994 a2200265 4500 | ||
|---|---|---|---|
| 005 | 20250516064637.0 | ||
| 264 | 0 | _c20111219 | |
| 008 | 201112s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2011.4223 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aHazdra, P | |
| 245 | 0 | 0 |
_aSelf-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _cAug 2011 |
||
| 300 |
_a6804-9 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aOswald, J | |
| 700 | 1 | _aKomarnitskyy, V | |
| 700 | 1 | _aKuldová, K | |
| 700 | 1 | _aHospodková, A | |
| 700 | 1 | _aHulicius, E | |
| 700 | 1 | _aPangrác, J | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 11 _gno. 8 _gp. 6804-9 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2011.4223 _zAvailable from publisher's website |
| 999 |
_c21330256 _d21330256 |
||