000 00861 a2200229 4500
005 20250516051628.0
264 0 _c20121002
008 201210s 0 0 eng d
022 _a0957-4484
024 7 _a10.1088/0957-4484/19/32/325708
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aHan, P G
245 0 0 _aPhotoluminescence from intermediate phase silicon structure and nanocrystalline silicon in plasma enhanced chemical vapor deposition grown Si/SiO(2) multilayers.
_h[electronic resource]
260 _bNanotechnology
_cAug 2008
300 _a325708 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aMa, Z Y
700 1 _aWang, Z B
700 1 _aZhang, X
773 0 _tNanotechnology
_gvol. 19
_gno. 32
_gp. 325708
856 4 0 _uhttps://doi.org/10.1088/0957-4484/19/32/325708
_zAvailable from publisher's website
999 _c21073503
_d21073503