000 01238 a2200325 4500
005 20250516045858.0
264 0 _c20110823
008 201108s 0 0 eng d
022 _a1533-4880
024 7 _a10.1166/jnn.2011.3752
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aHsu, Kuang-Yuan
245 0 0 _aGrowth and characteristics of self-assembly defect-free GaN surface islands by molecular beam epitaxy.
_h[electronic resource]
260 _bJournal of nanoscience and nanotechnology
_cApr 2011
300 _a3393-8 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't
650 0 4 _aCrystallization
_xmethods
650 0 4 _aGallium
_xchemistry
650 0 4 _aHeavy Ions
650 0 4 _aMacromolecular Substances
_xchemistry
650 0 4 _aMaterials Testing
650 0 4 _aMolecular Conformation
_xradiation effects
650 0 4 _aNanostructures
_xchemistry
650 0 4 _aParticle Size
650 0 4 _aSurface Properties
_xradiation effects
700 1 _aWang, Cheng-Yu
700 1 _aLiu, Chuan-Pu
773 0 _tJournal of nanoscience and nanotechnology
_gvol. 11
_gno. 4
_gp. 3393-8
856 4 0 _uhttps://doi.org/10.1166/jnn.2011.3752
_zAvailable from publisher's website
999 _c21023731
_d21023731