000 | 01238 a2200325 4500 | ||
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005 | 20250516045858.0 | ||
264 | 0 | _c20110823 | |
008 | 201108s 0 0 eng d | ||
022 | _a1533-4880 | ||
024 | 7 |
_a10.1166/jnn.2011.3752 _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aHsu, Kuang-Yuan | |
245 | 0 | 0 |
_aGrowth and characteristics of self-assembly defect-free GaN surface islands by molecular beam epitaxy. _h[electronic resource] |
260 |
_bJournal of nanoscience and nanotechnology _cApr 2011 |
||
300 |
_a3393-8 p. _bdigital |
||
500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
650 | 0 | 4 |
_aCrystallization _xmethods |
650 | 0 | 4 |
_aGallium _xchemistry |
650 | 0 | 4 | _aHeavy Ions |
650 | 0 | 4 |
_aMacromolecular Substances _xchemistry |
650 | 0 | 4 | _aMaterials Testing |
650 | 0 | 4 |
_aMolecular Conformation _xradiation effects |
650 | 0 | 4 |
_aNanostructures _xchemistry |
650 | 0 | 4 | _aParticle Size |
650 | 0 | 4 |
_aSurface Properties _xradiation effects |
700 | 1 | _aWang, Cheng-Yu | |
700 | 1 | _aLiu, Chuan-Pu | |
773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 11 _gno. 4 _gp. 3393-8 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2011.3752 _zAvailable from publisher's website |
999 |
_c21023731 _d21023731 |