| 000 | 00893 a2200277 4500 | ||
|---|---|---|---|
| 005 | 20250516041918.0 | ||
| 264 | 0 | _c20111115 | |
| 008 | 201111s 0 0 eng d | ||
| 022 | _a1944-8252 | ||
| 024 | 7 |
_a10.1021/am200310c _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aWu, Hung-Chi | |
| 245 | 0 | 0 |
_aOne-step Ge/Si epitaxial growth. _h[electronic resource] |
| 260 |
_bACS applied materials & interfaces _cJul 2011 |
||
| 300 |
_a2398-401 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aLin, Bi-Hsuan | |
| 700 | 1 | _aChen, Huang-Chin | |
| 700 | 1 | _aChen, Po-Chin | |
| 700 | 1 | _aSheu, Hwo-Shuenn | |
| 700 | 1 | _aLin, I-Nan | |
| 700 | 1 | _aChiu, Hsin-Tien | |
| 700 | 1 | _aLee, Chi-Young | |
| 773 | 0 |
_tACS applied materials & interfaces _gvol. 3 _gno. 7 _gp. 2398-401 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/am200310c _zAvailable from publisher's website |
| 999 |
_c20907779 _d20907779 |
||