000 01132 a2200337 4500
005 20250516031919.0
264 0 _c20110926
008 201109s 0 0 eng d
022 _a1936-086X
024 7 _a10.1021/nn102322s
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aQi, Jing Shan
245 0 0 _aThe possibility of chemically inert, graphene-based all-carbon electronic devices with 0.8 eV gap.
_h[electronic resource]
260 _bACS nano
_cMay 2011
300 _a3475-82 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, U.S. Gov't, Non-P.H.S.
650 0 4 _aComputer-Aided Design
650 0 4 _aEquipment Design
650 0 4 _aEquipment Failure Analysis
650 0 4 _aFeasibility Studies
650 0 4 _aGraphite
_xchemistry
650 0 4 _aNanotubes, Carbon
_xchemistry
650 0 4 _aParticle Size
650 0 4 _aSemiconductors
700 1 _aHuang, Jian Yu
700 1 _aFeng, Ji
700 1 _aShi, Da Ning
700 1 _aLi, Ju
773 0 _tACS nano
_gvol. 5
_gno. 5
_gp. 3475-82
856 4 0 _uhttps://doi.org/10.1021/nn102322s
_zAvailable from publisher's website
999 _c20725012
_d20725012