000 01237 a2200373 4500
005 20250516031231.0
264 0 _c20110803
008 201108s 0 0 eng d
022 _a1521-4095
024 7 _a10.1002/adma.201004746
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aHan, Nalae
245 0 0 _aPhase-change memory in Bi₂Te₃ nanowires.
_h[electronic resource]
260 _bAdvanced materials (Deerfield Beach, Fla.)
_cApr 2011
300 _a1871-5 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't
650 0 4 _aAluminum Oxide
_xchemistry
650 0 4 _aBismuth
_xchemistry
650 0 4 _aCrystallization
650 0 4 _aElectrodes
650 0 4 _aElectroplating
650 0 4 _aNanowires
_xchemistry
650 0 4 _aSilicon Compounds
_xchemistry
650 0 4 _aTellurium
_xchemistry
700 1 _aKim, Sung In
700 1 _aYang, Jeong-Do
700 1 _aLee, Kyumin
700 1 _aSohn, Hyunchul
700 1 _aSo, Hye-Mi
700 1 _aAhn, Chi Won
700 1 _aYoo, Kyung-Hwa
773 0 _tAdvanced materials (Deerfield Beach, Fla.)
_gvol. 23
_gno. 16
_gp. 1871-5
856 4 0 _uhttps://doi.org/10.1002/adma.201004746
_zAvailable from publisher's website
999 _c20702761
_d20702761