000 01165 a2200349 4500
005 20250516020131.0
264 0 _c20110414
008 201104s 0 0 eng d
022 _a1094-4087
024 7 _a10.1364/OE.18.027136
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aKim, C S
245 0 0 _aEstimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers.
_h[electronic resource]
260 _bOptics express
_cDec 2010
300 _a27136-41 p.
_bdigital
500 _aPublication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't
650 0 4 _aEquipment Failure Analysis
_xmethods
650 0 4 _aGallium
_xchemistry
650 0 4 _aIndium
_xchemistry
650 0 4 _aLasers, Semiconductor
650 0 4 _aPhotometry
_xmethods
650 0 4 _aProtons
700 1 _aJang, Y D
700 1 _aShin, D M
700 1 _aKim, J H
700 1 _aLee, D
700 1 _aChoi, Y H
700 1 _aNoh, M S
700 1 _aYee, K J
773 0 _tOptics express
_gvol. 18
_gno. 26
_gp. 27136-41
856 4 0 _uhttps://doi.org/10.1364/OE.18.027136
_zAvailable from publisher's website
999 _c20483327
_d20483327