000 | 01165 a2200349 4500 | ||
---|---|---|---|
005 | 20250516020131.0 | ||
264 | 0 | _c20110414 | |
008 | 201104s 0 0 eng d | ||
022 | _a1094-4087 | ||
024 | 7 |
_a10.1364/OE.18.027136 _2doi |
|
040 |
_aNLM _beng _cNLM |
||
100 | 1 | _aKim, C S | |
245 | 0 | 0 |
_aEstimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers. _h[electronic resource] |
260 |
_bOptics express _cDec 2010 |
||
300 |
_a27136-41 p. _bdigital |
||
500 | _aPublication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't | ||
650 | 0 | 4 |
_aEquipment Failure Analysis _xmethods |
650 | 0 | 4 |
_aGallium _xchemistry |
650 | 0 | 4 |
_aIndium _xchemistry |
650 | 0 | 4 | _aLasers, Semiconductor |
650 | 0 | 4 |
_aPhotometry _xmethods |
650 | 0 | 4 | _aProtons |
700 | 1 | _aJang, Y D | |
700 | 1 | _aShin, D M | |
700 | 1 | _aKim, J H | |
700 | 1 | _aLee, D | |
700 | 1 | _aChoi, Y H | |
700 | 1 | _aNoh, M S | |
700 | 1 | _aYee, K J | |
773 | 0 |
_tOptics express _gvol. 18 _gno. 26 _gp. 27136-41 |
|
856 | 4 | 0 |
_uhttps://doi.org/10.1364/OE.18.027136 _zAvailable from publisher's website |
999 |
_c20483327 _d20483327 |