000 00830 a2200229 4500
005 20250516005402.0
264 0 _c20121002
008 201210s 0 0 eng d
022 _a1559-128X
024 7 _a10.1364/AO.34.000676
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aNeitzert, H C
245 0 0 _aIn situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time-resolved microwave conductivity measurements.
_h[electronic resource]
260 _bApplied optics
_cFeb 1995
300 _a676-80 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aHirsch, W
700 1 _aKunst, M
700 1 _aNell, M E
773 0 _tApplied optics
_gvol. 34
_gno. 4
_gp. 676-80
856 4 0 _uhttps://doi.org/10.1364/AO.34.000676
_zAvailable from publisher's website
999 _c20265851
_d20265851