| 000 | 00846 a2200241 4500 | ||
|---|---|---|---|
| 005 | 20250516001423.0 | ||
| 264 | 0 | _c20110201 | |
| 008 | 201102s 0 0 eng d | ||
| 022 | _a1530-6992 | ||
| 024 | 7 |
_a10.1021/nl102255r _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aYao, Jun | |
| 245 | 0 | 0 |
_aResistive switches and memories from silicon oxide. _h[electronic resource] |
| 260 |
_bNano letters _cOct 2010 |
||
| 300 |
_a4105-10 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S. | ||
| 700 | 1 | _aSun, Zhengzong | |
| 700 | 1 | _aZhong, Lin | |
| 700 | 1 | _aNatelson, Douglas | |
| 700 | 1 | _aTour, James M | |
| 773 | 0 |
_tNano letters _gvol. 10 _gno. 10 _gp. 4105-10 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/nl102255r _zAvailable from publisher's website |
| 999 |
_c20140330 _d20140330 |
||