000 01203 a2200361 4500
005 20250515202531.0
264 0 _c20100317
008 201003s 0 0 eng d
022 _a1094-4087
024 7 _a10.1364/OE.17.022912
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aKe, Min-Yung
245 0 0 _aUV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.
_h[electronic resource]
260 _bOptics express
_cDec 2009
300 _a22912-7 p.
_bdigital
500 _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't
650 0 4 _aComputer-Aided Design
650 0 4 _aEquipment Design
650 0 4 _aEquipment Failure Analysis
650 0 4 _aLighting
_xinstrumentation
650 0 4 _aSemiconductors
650 0 4 _aUltraviolet Rays
700 1 _aLu, Tzu-Chun
700 1 _aYang, Sheng-Chieh
700 1 _aChen, Cheng-Pin
700 1 _aCheng, Yun-Wei
700 1 _aChen, Liang-Yi
700 1 _aChen, Cheng-Ying
700 1 _aHe, Jr-Hau
700 1 _aHuang, JianJang
773 0 _tOptics express
_gvol. 17
_gno. 25
_gp. 22912-7
856 4 0 _uhttps://doi.org/10.1364/OE.17.022912
_zAvailable from publisher's website
999 _c19431401
_d19431401