| 000 | 01010 a2200301 4500 | ||
|---|---|---|---|
| 005 | 20250515182217.0 | ||
| 264 | 0 | _c20091001 | |
| 008 | 200910s 0 0 eng d | ||
| 022 | _a1361-6528 | ||
| 024 | 7 |
_a10.1088/0957-4484/20/34/345201 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aChoi, Hyejung | |
| 245 | 0 | 0 |
_aAn electrically modifiable synapse array of resistive switching memory. _h[electronic resource] |
| 260 |
_bNanotechnology _cAug 2009 |
||
| 300 |
_a345201 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 700 | 1 | _aJung, Heesoo | |
| 700 | 1 | _aLee, Joonmyoung | |
| 700 | 1 | _aYoon, Jaesik | |
| 700 | 1 | _aPark, Jubong | |
| 700 | 1 | _aSeong, Dong-jun | |
| 700 | 1 | _aLee, Wootae | |
| 700 | 1 | _aHasan, Musarrat | |
| 700 | 1 | _aJung, Gun-Young | |
| 700 | 1 | _aHwang, Hyunsang | |
| 773 | 0 |
_tNanotechnology _gvol. 20 _gno. 34 _gp. 345201 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1088/0957-4484/20/34/345201 _zAvailable from publisher's website |
| 999 |
_c19059335 _d19059335 |
||