000 00846 a2200229 4500
005 20250515143527.0
264 0 _c20081216
008 200812s 0 0 eng d
022 _a1359-7345
024 7 _a10.1039/b807428c
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aChen, Ching-Shiun
245 0 0 _aLow-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique.
_h[electronic resource]
260 _bChemical communications (Cambridge, England)
_cOct 2008
300 _a4983-5 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aLin, Jarrn-Horng
700 1 _aLai, Tzu-Wen
700 1 _aLai, Tzn-Wen
773 0 _tChemical communications (Cambridge, England)
_gno. 40
_gp. 4983-5
856 4 0 _uhttps://doi.org/10.1039/b807428c
_zAvailable from publisher's website
999 _c18395061
_d18395061