| 000 | 00852 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250515051451.0 | ||
| 264 | 0 | _c20070220 | |
| 008 | 200702s 0 0 eng d | ||
| 022 | _a0002-7863 | ||
| 024 | 7 |
_a10.1021/ja063083d _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aChen, Ching S | |
| 245 | 0 | 0 |
_aProperties of Cu(thd)2 as a precursor to prepare Cu/SiO2 catalyst using the atomic layer epitaxy technique. _h[electronic resource] |
| 260 |
_bJournal of the American Chemical Society _cDec 2006 |
||
| 300 |
_a15950-1 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aLin, Jarrn H | |
| 700 | 1 | _aYou, Jainn H | |
| 700 | 1 | _aChen, Chi R | |
| 773 | 0 |
_tJournal of the American Chemical Society _gvol. 128 _gno. 50 _gp. 15950-1 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/ja063083d _zAvailable from publisher's website |
| 999 |
_c16734106 _d16734106 |
||