| 000 | 01064 a2200313 4500 | ||
|---|---|---|---|
| 005 | 20250515014344.0 | ||
| 264 | 0 | _c20060428 | |
| 008 | 200604s 0 0 eng d | ||
| 022 | _a1530-6984 | ||
| 024 | 7 |
_a10.1021/nl051265k _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aLi, Jianye | |
| 245 | 0 | 0 |
_aConversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties. _h[electronic resource] |
| 260 |
_bNano letters _cFeb 2006 |
||
| 300 |
_a148-52 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article; Research Support, Non-U.S. Gov't | ||
| 650 | 0 | 4 |
_aGallium _xchemistry |
| 650 | 0 | 4 |
_aNanotubes _xchemistry |
| 650 | 0 | 4 | _aOxidation-Reduction |
| 650 | 0 | 4 | _aParticle Size |
| 650 | 0 | 4 | _aPowder Diffraction |
| 650 | 0 | 4 | _aSensitivity and Specificity |
| 650 | 0 | 4 | _aSurface Properties |
| 700 | 1 | _aAn, Lei | |
| 700 | 1 | _aLu, Chenguang | |
| 700 | 1 | _aLiu, Jie | |
| 773 | 0 |
_tNano letters _gvol. 6 _gno. 2 _gp. 148-52 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1021/nl051265k _zAvailable from publisher's website |
| 999 |
_c16076992 _d16076992 |
||