000 01307 a2200373 4500
005 20250514214401.0
264 0 _c20050531
008 200505s 0 0 eng d
022 _a1533-4880
024 7 _a10.1166/jnn.2004.135
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aLi, Seu Yi
245 0 0 _aFabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer.
_h[electronic resource]
260 _bJournal of nanoscience and nanotechnology
_cNov 2004
300 _a968-71 p.
_bdigital
500 _aPublication Type: Evaluation Study; Journal Article; Research Support, Non-U.S. Gov't
650 0 4 _aAdsorption
650 0 4 _aCrystallization
_xmethods
650 0 4 _aElectric Wiring
650 0 4 _aMaterials Testing
650 0 4 _aMolecular Conformation
650 0 4 _aNanotechnology
_xmethods
650 0 4 _aNanotubes
_xchemistry
650 0 4 _aSemiconductors
650 0 4 _aSilicon
_xchemistry
650 0 4 _aSurface Properties
650 0 4 _aZinc Oxide
_xchemistry
700 1 _aLin, Pang
700 1 _aLee, Chia Ying
700 1 _aHo, Mon Shu
700 1 _aTseng, Tseung Yuen
773 0 _tJournal of nanoscience and nanotechnology
_gvol. 4
_gno. 8
_gp. 968-71
856 4 0 _uhttps://doi.org/10.1166/jnn.2004.135
_zAvailable from publisher's website
999 _c15335313
_d15335313