| 000 | 01432 a2200409 4500 | ||
|---|---|---|---|
| 005 | 20250514074800.0 | ||
| 264 | 0 | _c20031118 | |
| 008 | 200311s 0 0 eng d | ||
| 022 | _a1533-4880 | ||
| 024 | 7 |
_a10.1166/jnn.2002.092 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aJohnson, J W | |
| 245 | 0 | 0 |
_aPerformance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. _h[electronic resource] |
| 260 |
_bJournal of nanoscience and nanotechnology _c |
||
| 300 |
_a325-32 p. _bdigital |
||
| 500 | _aPublication Type: Evaluation Study; Journal Article; Research Support, U.S. Gov't, Non-P.H.S. | ||
| 650 | 0 | 4 |
_aAluminum _xchemistry |
| 650 | 0 | 4 | _aAmplifiers, Electronic |
| 650 | 0 | 4 |
_aCrystallization _xmethods |
| 650 | 0 | 4 |
_aElectrochemistry _xinstrumentation |
| 650 | 0 | 4 | _aElectrons |
| 650 | 0 | 4 | _aEquipment Design |
| 650 | 0 | 4 |
_aEquipment Failure Analysis _xmethods |
| 650 | 0 | 4 |
_aGallium _xchemistry |
| 650 | 0 | 4 |
_aMaterials Testing _xmethods |
| 650 | 0 | 4 | _aMiniaturization |
| 650 | 0 | 4 |
_aNanotechnology _xinstrumentation |
| 650 | 0 | 4 | _aTransistors, Electronic |
| 700 | 1 | _aRen, F | |
| 700 | 1 | _aPearton, S J | |
| 700 | 1 | _aBaca, A G | |
| 700 | 1 | _aHan, J | |
| 700 | 1 | _aDabiran, A M | |
| 700 | 1 | _aChow, P P | |
| 773 | 0 |
_tJournal of nanoscience and nanotechnology _gvol. 2 _gno. 3-4 _gp. 325-32 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1166/jnn.2002.092 _zAvailable from publisher's website |
| 999 |
_c12682782 _d12682782 |
||