| 000 | 00801 a2200229 4500 | ||
|---|---|---|---|
| 005 | 20250514071022.0 | ||
| 264 | 0 | _c20030717 | |
| 008 | 200307s 0 0 eng d | ||
| 022 | _a0031-9007 | ||
| 024 | 7 |
_a10.1103/PhysRevLett.90.186101 _2doi |
|
| 040 |
_aNLM _beng _cNLM |
||
| 100 | 1 | _aBongiorno, Angelo | |
| 245 | 0 | 0 |
_aTransition structure at the Si(100)-SiO2 interface. _h[electronic resource] |
| 260 |
_bPhysical review letters _cMay 2003 |
||
| 300 |
_a186101 p. _bdigital |
||
| 500 | _aPublication Type: Journal Article | ||
| 700 | 1 | _aPasquarello, Alfredo | |
| 700 | 1 | _aHybertsen, Mark S | |
| 700 | 1 | _aFeldman, L C | |
| 773 | 0 |
_tPhysical review letters _gvol. 90 _gno. 18 _gp. 186101 |
|
| 856 | 4 | 0 |
_uhttps://doi.org/10.1103/PhysRevLett.90.186101 _zAvailable from publisher's website |
| 999 |
_c12571501 _d12571501 |
||