000 00845 a2200241 4500
005 20250514005525.0
264 0 _c20010906
008 200109s 0 0 eng d
022 _a0909-0495
024 7 _a10.1107/s0909049501001248
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aCheong, S K
245 0 0 _aXAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces.
_h[electronic resource]
260 _bJournal of synchrotron radiation
_cMar 2001
300 _a824-6 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aBunker, B A
700 1 _aHall, D C
700 1 _aSnider, G L
700 1 _aBarrios, P J
773 0 _tJournal of synchrotron radiation
_gvol. 8
_gno. Pt 2
_gp. 824-6
856 4 0 _uhttps://doi.org/10.1107/s0909049501001248
_zAvailable from publisher's website
999 _c11437595
_d11437595