000 00790 a2200217 4500
005 20250514005022.0
264 0 _c20010913
008 200109s 0 0 eng d
022 _a0031-9007
024 7 _a10.1103/PhysRevLett.87.056801
_2doi
040 _aNLM
_beng
_cNLM
100 1 _aAltfeder, I B
245 0 0 _aConfinement-enhanced electron transport across a metal-semiconductor interface.
_h[electronic resource]
260 _bPhysical review letters
_cJul 2001
300 _a056801 p.
_bdigital
500 _aPublication Type: Journal Article
700 1 _aGolovchenko, J A
700 1 _aNarayanamurti, V
773 0 _tPhysical review letters
_gvol. 87
_gno. 5
_gp. 056801
856 4 0 _uhttps://doi.org/10.1103/PhysRevLett.87.056801
_zAvailable from publisher's website
999 _c11423075
_d11423075