Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al∕SiO(2)∕p-Si metal-insulator-semiconductor Schottky diodes. [electronic resource]

By: Contributor(s): Publication details: Journal of applied physics Jul 2011Description: 14507-145075 p. digitalISSN:
  • 0021-8979
Online resources: In: Journal of applied physics vol. 110
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Publication Type: Journal Article

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