Evidence for a crucial role played by oxygen vacancies in LaMnO3 resistive switching memories. [electronic resource]

By: Contributor(s): Producer: 20120809Description: 1279-84 p. digitalISSN:
  • 1613-6829
Online resources: In: Small (Weinheim an der Bergstrasse, Germany) vol. 8
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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