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GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors. [electronic resource] by
- Yu, Feng
- Yao, Shengbo
- Römer, Friedhard
- Witzigmann, Bernd
- Schimpke, Tilman
- Strassburg, Martin
- Bakin, Andrey
- Schumacher, Hans Werner
- Peiner, Erwin
- Wasisto, Hutomo Suryo
- Waag, Andreas
Producer: 20180723
In:
Nanotechnology vol. 28
Availability: No items available.
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. [electronic resource] by
- Fatahilah, Muhammad Fahlesa
- Yu, Feng
- Strempel, Klaas
- Römer, Friedhard
- Maradan, Dario
- Meneghini, Matteo
- Bakin, Andrey
- Hohls, Frank
- Schumacher, Hans Werner
- Witzigmann, Bernd
- Waag, Andreas
- Wasisto, Hutomo Suryo
Publication details: Scientific reports Jul 2019
In:
Scientific reports vol. 9
Availability: No items available.
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InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit. [electronic resource] by
- Wallentin, Jesper
- Anttu, Nicklas
- Asoli, Damir
- Huffman, Maria
- Aberg, Ingvar
- Magnusson, Martin H
- Siefer, Gerald
- Fuss-Kailuweit, Peter
- Dimroth, Frank
- Witzigmann, Bernd
- Xu, H Q
- Samuelson, Lars
- Deppert, Knut
- Borgström, Magnus T
Producer: 20130307
In:
Science (New York, N.Y.) vol. 339
Availability: No items available.
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