Results
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Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots. [electronic resource] by
- Yuan, Qing
- Liang, Baolai
- Zhou, Chuan
- Wang, Ying
- Guo, Yingnan
- Wang, Shufang
- Fu, Guangsheng
- Mazur, Yuriy I
- Ware, Morgan E
- Salamo, Gregory J
Publication details: Nanoscale research letters Nov 2018
In:
Nanoscale research letters vol. 13
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Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots. [electronic resource] by
- Liang, Baolai
- Yuan, Qing
- Su, Linlin
- Wang, Ying
- Guo, Yingnan
- Wang, Shufang
- Fu, Guangsheng
- Marega, Euclydes
- Mazur, Yuriy I
- Ware, Morgan E
- Salamo, Gregory
Producer: 20180906
In:
Optics express vol. 26
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Substrate effects on the strain relaxation in GaN/AlN short-period superlattices. [electronic resource] by
- Kladko, Vasyl
- Kuchuk, Andrian
- Lytvyn, Petro
- Yefanov, Olexandr
- Safriuk, Nadiya
- Belyaev, Alexander
- Mazur, Yuriy I
- Decuir, Eric A
- Ware, Morgan E
- Salamo, Gregory J
Producer: 20121119
In:
Nanoscale research letters vol. 7
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Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy. [electronic resource] by
- Yuan, Qing
- Liang, Baolai
- Luo, Shiping
- Wang, Ying
- Yan, Qigeng
- Wang, Shufang
- Fu, Guangsheng
- Mazur, Yuriy I
- Maidaniuk, Yurii
- Ware, Morgan E
- Salamo, Gregory J
Publication details: Nanotechnology Jul 2020
In:
Nanotechnology vol. 31
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8.
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Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. [electronic resource] by
- Wang, Ying
- Sheng, Xinzhi
- Guo, Qinglin
- Li, Xiaoli
- Wang, Shufang
- Fu, Guangsheng
- Mazur, Yuriy I
- Maidaniuk, Yurii
- Ware, Morgan E
- Salamo, Gregory J
- Liang, Baolai
- Huffaker, Diana L
Publication details: Nanoscale research letters Dec 2017
In:
Nanoscale research letters vol. 12
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10.
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The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study. [electronic resource] by
- Kuchuk, Andrian V
- Kryvyi, Serhii
- Lytvyn, Petro M
- Li, Shibin
- Kladko, Vasyl P
- Ware, Morgan E
- Mazur, Yuriy I
- Safryuk, Nadiia V
- Stanchu, Hryhorii V
- Belyaev, Alexander E
- Salamo, Gregory J
Producer: 20160517
In:
Nanoscale research letters vol. 11
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11.
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Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate. [electronic resource] by
- Wu, Jiang
- Ramsay, Andrew
- Sanchez, Ana
- Zhang, Yunyan
- Kim, Dongyoung
- Brossard, Frederic
- Hu, Xian
- Benamara, Mourad
- Ware, Morgan E
- Mazur, Yuriy I
- Salamo, Gregory J
- Aagesen, Martin
- Wang, Zhiming
- Liu, Huiyun
Producer: 20160613
In:
Nano letters vol. 16
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12.
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Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate. [electronic resource] by
- Kuchuk, Andrian V
- Lytvyn, Petro M
- Li, Chen
- Stanchu, Hryhorii V
- Mazur, Yuriy I
- Ware, Morgan E
- Benamara, Mourad
- Ratajczak, Renata
- Dorogan, Vitaliy
- Kladko, Vasyl P
- Belyaev, Alexander E
- Salamo, Gregory G
Producer: 20160125
In:
ACS applied materials & interfaces vol. 7
Availability: No items available.
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13.
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Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique. [electronic resource] by
- Al Saqri, Noor Alhuda
- Felix, Jorlandio F
- Aziz, Mohsin
- Kunets, Vasyl P
- Jameel, Dler
- Taylor, David
- Henini, Mohamed
- Abd El-Sadek, Mahmmoud S
- Furrow, Colin
- Ware, Morgan E
- Benamara, Mourad
- Mortazavi, Mansour
- Salamo, Gregory
Producer: 20180723
In:
Nanotechnology vol. 28
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14.
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Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. [electronic resource] by
- Tsykaniuk, Bogdan I
- Nikolenko, Andrii S
- Strelchuk, Viktor V
- Naseka, Viktor M
- Mazur, Yuriy I
- Ware, Morgan E
- DeCuir, Eric A
- Sadovyi, Bogdan
- Weyher, Jan L
- Jakiela, Rafal
- Salamo, Gregory J
- Belyaev, Alexander E
Publication details: Nanoscale research letters Dec 2017
In:
Nanoscale research letters vol. 12
Availability: No items available.
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15.
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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. [electronic resource] by
- Tsykaniuk, Bogdan I
- Nikolenko, Andrii S
- Strelchuk, Viktor V
- Naseka, Viktor M
- Mazur, Yuriy I
- Ware, Morgan E
- DeCuir, Eric A
- Sadovyi, Bogdan
- Weyher, Jan L
- Jakiela, Rafal
- Salamo, Gregory J
- Belyaev, Alexander E
Publication details: Nanoscale research letters Aug 2017
In:
Nanoscale research letters vol. 12
Availability: No items available.
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