Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors. [electronic resource]

By: Contributor(s): Producer: 20120120Description: 4237-42 p. digitalISSN:
  • 1521-4095
Subject(s): Online resources: In: Advanced materials (Deerfield Beach, Fla.) vol. 23
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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