Results
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1.
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Ultralong and defect-free GaN nanowires grown by the HVPE process. [electronic resource] by
- Avit, Geoffrey
- Lekhal, Kaddour
- André, Yamina
- Bougerol, Catherine
- Réveret, François
- Leymarie, Joël
- Gil, Evelyne
- Monier, Guillaume
- Castelluci, Dominique
- Trassoudaine, Agnès
Producer: 20150330
In:
Nano letters vol. 14
Availability: No items available.
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2.
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Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy. [electronic resource] by
- Dong, Zhenning
- André, Yamina
- Dubrovskii, Vladimir G
- Bougerol, Catherine
- Leroux, Christine
- Ramdani, Mohammed R
- Monier, Guillaume
- Trassoudaine, Agnès
- Castelluci, Dominique
- Gil, Evelyne
Producer: 20180723
In:
Nanotechnology vol. 28
Availability: No items available.
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3.
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Compositional control of homogeneous InGaN nanowires with the In content up to 90. [electronic resource] by
- Zeghouane, Mohammed
- Avit, Geoffrey
- André, Yamina
- Bougerol, Catherine
- Robin, Yoann
- Ferret, Pierre
- Castelluci, Dominique
- Gil, Evelyne
- Dubrovskii, Vladimir G
- Amano, Hiroshi
- Trassoudaine, Agnès
Producer: 20181211
In:
Nanotechnology vol. 30
Availability: No items available.
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4.
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Circumventing the miscibility gap in InGaN nanowires emitting from blue to red. [electronic resource] by
- Roche, Elissa
- André, Yamina
- Avit, Geoffrey
- Bougerol, Catherine
- Castelluci, Dominique
- Réveret, François
- Gil, Evelyne
- Médard, François
- Leymarie, Joël
- Jean, Theo
- Dubrovskii, Vladimir G
- Trassoudaine, Agnès
Producer: 20180926
In:
Nanotechnology vol. 29
Availability: No items available.
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5.
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Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type? [electronic resource] by
- Hijazi, Hadi
- Monier, Guillaume
- Gil, Evelyne
- Trassoudaine, Agnès
- Bougerol, Catherine
- Leroux, Christine
- Castellucci, Dominique
- Robert-Goumet, Christine
- Hoggan, Philip E
- André, Yamina
- Isik Goktas, Nebile
- LaPierre, Ray R
- Dubrovskii, Vladimir G
Publication details: Nano letters Jul 2019
In:
Nano letters vol. 19
Availability: No items available.
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6.
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Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation. [electronic resource] by
- André, Yamina
- Lekhal, Kaddour
- Hoggan, Philip
- Avit, Geoffrey
- Cadiz, Fabian
- Rowe, Alistair
- Paget, Daniel
- Petit, Elodie
- Leroux, Christine
- Trassoudaine, Agnès
- Ramdani, M Réda
- Monier, Guillaume
- Colas, David
- Ajib, Rabih
- Castelluci, Dominique
- Gil, Evelyne
Producer: 20141103
In:
The Journal of chemical physics vol. 140
Availability: No items available.
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7.
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Record pure zincblende phase in GaAs nanowires down to 5 nm in radius. [electronic resource] by
- Gil, Evelyne
- Dubrovskii, Vladimir G
- Avit, Geoffrey
- André, Yamina
- Leroux, Christine
- Lekhal, Kaddour
- Grecenkov, Jurij
- Trassoudaine, Agnès
- Castelluci, Dominique
- Monier, Guillaume
- Ramdani, Reda M
- Robert-Goumet, Christine
- Bideux, Luc
- Harmand, Jean Christophe
- Glas, Frank
Producer: 20150330
In:
Nano letters vol. 14
Availability: No items available.
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