APA

Shah V. A., Myronov M., Wongwanitwatana C., Bawden L., Prest M. J., Richardson-Bullock J. S., Rhead S., Parker E. H. C., Whall T. E. & Leadley D. R. (2012). Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. : Science and technology of advanced materials.

Chicago

Shah Vishal Ajit, Myronov Maksym, Wongwanitwatana Chalermwat, Bawden Lewis, Prest Martin J, Richardson-Bullock James S, Rhead Stephen, Parker Evan H C, Whall Terrance E and Leadley David R. 2012. Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. : Science and technology of advanced materials.

Harvard

Shah V. A., Myronov M., Wongwanitwatana C., Bawden L., Prest M. J., Richardson-Bullock J. S., Rhead S., Parker E. H. C., Whall T. E. and Leadley D. R. (2012). Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. : Science and technology of advanced materials.

MLA

Shah Vishal Ajit, Myronov Maksym, Wongwanitwatana Chalermwat, Bawden Lewis, Prest Martin J, Richardson-Bullock James S, Rhead Stephen, Parker Evan H C, Whall Terrance E and Leadley David R. Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures. : Science and technology of advanced materials. 2012.