APA

Li H., Khoury M., Bonef B., Alhassan A. I., Mughal A. J., Azimah E., Samsudin M. E. A., De Mierry P., Nakamura S., Speck J. S. & DenBaars S. P. (20180724). Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. : ACS applied materials & interfaces.

Chicago

Li Hongjian, Khoury Michel, Bonef Bastien, Alhassan Abdullah I, Mughal Asad J, Azimah Ezzah, Samsudin Muhammad E A, De Mierry Philippe, Nakamura Shuji, Speck James S and DenBaars Steven P. 20180724. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. : ACS applied materials & interfaces.

Harvard

Li H., Khoury M., Bonef B., Alhassan A. I., Mughal A. J., Azimah E., Samsudin M. E. A., De Mierry P., Nakamura S., Speck J. S. and DenBaars S. P. (20180724). Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. : ACS applied materials & interfaces.

MLA

Li Hongjian, Khoury Michel, Bonef Bastien, Alhassan Abdullah I, Mughal Asad J, Azimah Ezzah, Samsudin Muhammad E A, De Mierry Philippe, Nakamura Shuji, Speck James S and DenBaars Steven P. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. : ACS applied materials & interfaces. 20180724.