APA

Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Li C., Kim W., Riikonen J., Lipsanen H. & Jiménez D. (20180723). Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor. : Nanotechnology.

Chicago

Feijoo Pedro C, Pasadas Francisco, Iglesias José M, Martín María J, Rengel Raúl, Li Changfeng, Kim Wonjae, Riikonen Juha, Lipsanen Harri and Jiménez David. 20180723. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor. : Nanotechnology.

Harvard

Feijoo P. C., Pasadas F., Iglesias J. M., Martín M. J., Rengel R., Li C., Kim W., Riikonen J., Lipsanen H. and Jiménez D. (20180723). Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor. : Nanotechnology.

MLA

Feijoo Pedro C, Pasadas Francisco, Iglesias José M, Martín María J, Rengel Raúl, Li Changfeng, Kim Wonjae, Riikonen Juha, Lipsanen Harri and Jiménez David. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor. : Nanotechnology. 20180723.