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	1.	The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories. [electronic resource] by Rahaman, Sk Ziaur Lin, Yu-De Lee, Heng-Yuan Chen, Yu-Sheng Chen, Pang-Shiu Chen, Wei-Su Hsu, Chien-Hua Tsai, Kan-Hsueh Tsai, Ming-Jinn Wang, Pei-Hua Producer: 20180710 In: Langmuir : the ACS journal of surfaces and colloids vol. 33 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	2.	Retention Model of TaO/HfO [electronic resource] by Lin, Yu-De Chen, Pang-Shiu Lee, Heng-Yuan Chen, Yu-Sheng Rahaman, Sk Ziaur Tsai, Kan-Hsueh Hsu, Chien-Hua Chen, Wei-Su Wang, Pei-Hua King, Ya-Chin Lin, Chrong Jung Publication details: Nanoscale research letters Dec 2017 In: Nanoscale research letters vol. 12 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)

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