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	1.	Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface. [electronic resource] by Winn, Darby L Hale, Michael J Grassman, Tyler J Kummel, Andrew C Droopad, Ravi Passlack, Matthias Producer: 20070426 In: The Journal of chemical physics vol. 126 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	2.	Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4). [electronic resource] by Winn, Darby L Hale, Michael J Grassman, Tyler J Sexton, Jonathan Z Kummel, Andrew C Passlack, Matthias Droopad, Ravi Producer: 20071126 In: The Journal of chemical physics vol. 127 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	3.	Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. [electronic resource] by Shen, Jian Chagarov, Evgueni A Feldwinn, Darby L Melitz, Wilhelm Santagata, Nancy M Kummel, Andrew C Droopad, Ravi Passlack, Matthias Producer: 20110303 In: The Journal of chemical physics vol. 133 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)
	4.	Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration. [electronic resource] by Holland, Martin van Dal, Mark Duriez, Blandine Oxland, Richard Vellianitis, Georgios Doornbos, Gerben Afzalian, Aryan Chen, Ta-Kun Hsieh, Chih-Hua Ramvall, Peter Vasen, Tim Yeo, Yee-Chia Passlack, Matthias Publication details: Scientific reports 11 2017 In: Scientific reports vol. 7 Online resources: Available from publisher's website Availability: No items available. Save to lists Add to cart (remove)