APA

Urdampilleta M., Niegemann D. J., Chanrion E., Jadot B., Spence C., Mortemousque P., Bäuerle C., Hutin L., Bertrand B., Barraud S., Maurand R., Sanquer M., Jehl X., De Franceschi S., Vinet M. & Meunier T. (2019). Gate-based high fidelity spin readout in a CMOS device. : Nature nanotechnology.

Chicago

Urdampilleta Matias, Niegemann David J, Chanrion Emmanuel, Jadot Baptiste, Spence Cameron, Mortemousque Pierre-André, Bäuerle Christopher, Hutin Louis, Bertrand Benoit, Barraud Sylvain, Maurand Romain, Sanquer Marc, Jehl Xavier, De Franceschi Silvano, Vinet Maud and Meunier Tristan. 2019. Gate-based high fidelity spin readout in a CMOS device. : Nature nanotechnology.

Harvard

Urdampilleta M., Niegemann D. J., Chanrion E., Jadot B., Spence C., Mortemousque P., Bäuerle C., Hutin L., Bertrand B., Barraud S., Maurand R., Sanquer M., Jehl X., De Franceschi S., Vinet M. and Meunier T. (2019). Gate-based high fidelity spin readout in a CMOS device. : Nature nanotechnology.

MLA

Urdampilleta Matias, Niegemann David J, Chanrion Emmanuel, Jadot Baptiste, Spence Cameron, Mortemousque Pierre-André, Bäuerle Christopher, Hutin Louis, Bertrand Benoit, Barraud Sylvain, Maurand Romain, Sanquer Marc, Jehl Xavier, De Franceschi Silvano, Vinet Maud and Meunier Tristan. Gate-based high fidelity spin readout in a CMOS device. : Nature nanotechnology. 2019.