High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. [electronic resource]

By: Contributor(s): Producer: 20180516Description: 29747 p. digitalISSN:
  • 2045-2322
Online resources: In: Scientific reports vol. 6
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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