Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment. [electronic resource]

By: Contributor(s): Producer: 20150422Description: 14850-8 p. digitalISSN:
  • 1094-4087
Online resources: In: Optics express vol. 22
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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