Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells. [electronic resource]

By: Contributor(s): Producer: 20140514Description: 9429-34 p. digitalISSN:
  • 1944-8252
Online resources: In: ACS applied materials & interfaces vol. 5
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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