Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode. [electronic resource]

By: Contributor(s): Producer: 20120113Description: 14662-70 p. digitalISSN:
  • 1094-4087
Online resources: In: Optics express vol. 19
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Publication Type: Journal Article; Research Support, Non-U.S. Gov't

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