The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation. [electronic resource]

By: Contributor(s): Publication details: Sensors (Basel, Switzerland) Aug 2019ISSN:
  • 1424-8220
Online resources: In: Sensors (Basel, Switzerland) vol. 19
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Publication Type: Journal Article

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